Title : Silicon Photonics : Convergence of Photonics and Electronics on Si Platform for New Information Era
Speaker : Dr. Donghwan Ahn (Senior Research Engineer at Samsung Electronics U.S. R&D Center (SAIT-USA))
Date & Time : 2012. 3. 26. 월요일 16:00
Where : 융기원 A-103(세미나룸Ⅱ)
Abstract
One of the hottest recent research trends in information technology (IT) industry is the rapid emergence of Silicon Photonics – interdisciplinary science and engineering field that explores the photonic functionalities of silicon-based group IV materials and converges them with Si microelectronics. Silicon photonics has potential to bring in “a whole new physics paradigm” into the incumbent Si microelectronic chips – which would be a revolutionary change of using “light” rather than electricity to transfer data.
The talk will begin with a “partial research failure” story of the Intel-MIT optical clocking project, from early in the last decade, which provided a strong motivation for research on waveguide-integrated high-speed group IV photodetectors. The talk will present the world’s first demonstrated monolithic waveguide-integrated Gephotodetector, which we announced from MIT in 2007. Such a device, showing superior device performances beyond any previous discrete Gephotodetectors, clearly demonstrated that monolithic device integration can help the group IV materials and devices achieve a new level of device performances, and heralded the blossoming research in CMOS-compatible electronic-photonic integrated circuits (EPIC). The innovative design ideas for turning the poor optical material properties of Si and Ge into excellent device performances will be introduced and the design consideration for the unique group IV materials phenomena for such passive-active device integration will be explained. The talk will overview the recent key research results and trends by the frontrunners in academia and industry and will discuss, along with the necessary future research direction, what roles Korea can play amid this technology revolution.
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