차세대융합기술연구원

• Frequency resolution : < 0.005Hz
• Phase resolution : < 0.006°
• Attenuation resolution / attenuation range : < 0.1dB / 90dB
• Amplitude modulation : > 90dB
• Event time for digital setting of frequency, phase and amplitude, either individually or simultaneously : 25ns
• Memory per channel e.g. for pulse shaping : > 8 Mbyte
• Phase monotony over 90dB amplitude setting range : < + / -0.5°

• 전자빔을 활용하여 미세 구조물 시료의 표면을 관찰하는 고분해능 현미경으로 표면 형태, 구조 등 관찰
• 높은 가속전압을 가해 이온을 발생시키고 표면의 선택적 영역에 주사하여 시료를 가공

• 높은 Ion beam 밀도로 빠른 속도의 FIB 시료 가공 가능
• 저 가속 전압 샘플 가공이 용이하여 고품질의 TEM 샘플 제작 가능
• EDX detector 추가를 통하여 표면 원소성분 분포, 정성 및 정량 분석 가능
• 반도체, 디스플레이의 미세 구조, 패터닝 등의 분석에 활용 가능

1) FIB/FE-SEM

• Resolution
• High resolution : 0.6nm at 30kV (STEM), 0.6nm at 15kV, 1.7nm at 1kV
• Coincident Point (WD 5mm) : 1.2nm at 1kV
• Acceleration voltage range : 0.02 ~ 30kV
• Probe current : 5pA to 20nA
• Magnification range : 12✕~2,000,000
• Electron Source : Schottky field emitter
• Focus Working Distance : 1~40mm
• Beam Shift (at 20kV, WD=8.5mm) : 100㎛(±50㎛)

2) FIB column

• Ion Source : Gallium Liquid Ion Metal source
• FIB resolution : 2.5nm at 30kV
• Probe Current : 1pA to 100nA
• Magnification : 300✕~500,000
• Acceleration Voltage : 0.5 ~ 30kV

3) Detector

• TLD : Efficient detection of SEs, Low take off angle BSEs
• MD : Medium take-off angle BSEs – better materials contrast
• ICD : High take-off angle, Low-loss BSEs - pure materials contrast

4) Software

• AutoTEM 5, AutoTEM 5 Automation Science, Enhanced Stage Rotation Accuracy, AutoSlice and View 4, AutoSlice and View Analytical Package, Maps 3 for SEM

5) EDS

• EDS-Quantax 400 XFlash 6-30mm2 – 129eV – Quantax 400 Q655-30-129

• Electron 및 Ion 의 두 개의 column으로 이루어진 Dual Beam system이 적용된 장비이며, Ga source를 활용한 집속 이온 빔의 식각 특성을 활용하여 Sub-Micro & Sub-Nano의 미세 영역을 가공 및 분석하는 장비
• 특정 영역의 가공 및 이미지 관찰이 용이하며 가공한 샘플을 chamber 내부에서 SEM을 활용 하여 직접적으로 imaging 분석 및 EDS를 활용한 성분분석, STEM을 활용한 결정구조분석.

• Sidewinder HT 이온 컬럼을 통한 고품질, 위치별 TEM 시료 제작 가능
• 높은 Ion beam 밀도로 빠른 속도의 FIB 시료 가공 가능
• EDX detector 추가를 통하여 표면 원소성분 분포, 정성 및 정량 분석 가능
• 반도체 및 디스플레이 장치를 이미지화 및 특성 분석

1) FIB/FE-SEM

• High resolution : 0.7 nm at 30 kV (STEM), 1.0 nm at 30 kV, 1.4 nm at 1 kV
• Acceleration voltage range : 0.02 ~ 30 kV
• Probe current : 1 pA to 400 nA
• Magnification range : 12~1,250,000×
• Electron source : Schottky field emitter
• Focus working distance : 1~40 mm

2) FIB column

• Ion source : Gallium Liquid
• Ion Metal source
• FIB resolution : 3.0 nm at 30 kV
• Probe current : 1.5 pA to 65 nA
• Magnification : 300~500,000×
• Acceleration voltage : 0.5 ~ 30 kV

3) Detector

• • Trinity Detection System
• - T1 : segmented lower in-lens detector (BSE)
• - T2 : upper in-lens detector (SE)
• - T3 : retractable in-column detector (SE)
• - Up to four simultaneously detected signals
• - Angular and energy-selective SE and BSE imaging
• • ETD : SE (tunable energy) / BSE
• • ICE : electron beam (SE / BSE), ion beam (SE / SI)

4) Software

• iSPI, intermittent SEM imaging and FIB patterning iRTM, integrated real time monitor for real-time SEM and FIB process monitoring and endpointing iFast, advanced utomation suite for DualBeam instruments

5) EDS

• Quantax 400 XFlash® 6
• Active area: 60 mm²
• Energy resolution: 129 eV standard
• Input count rate: Over 1,500 kcps
• Output count rate: Up to 600 kcps

고분자, 유기물, 반도체 등 다양한 물질의 표면 및 계면 분석, 정량 분석, 전자구조 분석

1) XPS : 1,000~1,500 eV의 X-선을 이용하여, 코어레벨의 전자를 분석해 내각전자의 결합에너지, 화학결합상태, 상대 정량 분석

2) UPS : 10~20 eV의 자외선을 이용하여 밸런스 레벨의 전자를 분석해 최외각 전자에너지, 밴드갭 에너지, 일함수 분석

3) ARXPS : 각도 변환에 따른 광전자 분석을 통해 비파괴 수직적 화학 조성 및 분포 분석

4) Temperature dependence : +800℃~-100℃(액체질소) 범위에서의 XPS 분석

5) Depth profile : 이온건을 이용한 시료 에칭을 통해 깊이 분포에 따른 XPS 스펙트럼 측정

1) Electron analyzer with lens system

• Type : spherical sector analyzer
• Minimum analysis area : 15 μm, 6,000 cps @ 0.6 eV FWHM
• Kinetic energy range : 0~1486 eV (Al), 0~2984 eV (Ag)
• Ultimate energy resolution of Ag 3d5/2 peak: ≤0.48 eV FWHM
• Detector : 128-channel DLD(Delay-Line Detector) with MCP(Micro-Channel Plate)
• Maximum sensitivity at 0.6 eV FWHM on Ag3d5: 2,500,000 cps

2) Micro-focused monochromated X-ray source

• Anode material : Al (Ag option)
• Rowland circle : 500 mm
• Automatic control : full data system control and adjustment
• Source : Al-Kα (1486.6 eV)
• Energy Resolution : Ag 3d5/2

3) Ultra violet light source

• Sensitivity : 1,000,000 cps for Ag 4d
• HeⅠ(21.2 eV) or He Ⅱ(40.8 eV)
• Energy resolution : 110 meV
• Minimum step size is 1 meV

4) Sputtering ion gun control

• Type : mono Ar and Ar cluster ion source
• Ultimate vacuum : 5 × 10-7 Torr
• Beam Energy : 500 eV ~ 4 keV

5) High precision manipulator (5-axis manipulator)

• Maximum specimen dimensions : 60 mm dia
• Mounting plates: multi-specimen:2, powder: 1
• Sample tilt : +, - 45 degree

6) Vacuum transfer holder

• Sample holder allowing samples to be transferred under vacuum into the system
• Maximum specimen thickness : 9 mm
• Three transfer holders

1) XRD, GIXRD, XRR 측정을 통한 물질 상분석, 구조분석, 박막 두께 분석

2) In-situ 온도 XRD: -190~600 ℃ (사전협의 필요)

3) In-situ 전기화학 XRD: 코인셀 충방전에 따른 XRD 측정 (사전협의 필요)

- Available anodes: Cu, Mo

- Goniometer accuracy: Δ2θ ≤ 0.007° determined on NIST SRM 1976X

- Beam divergence: <0.023° at 40 mm

- TRIO Optics

• : Software push-button switch between
• : Motorized Divergence Slit (Bragg-Brentano)
• : High Intensity Parallel Beam

- High-Resolution Monochromators

• : Ge(220) and Ge(004) reflection2-bounce monochromator

- Detector

• : Active area: 2978 mm²
• : Maximum count rate: 3.6×10⁸ ph/s/mm²
• : Spatial resolution: 75 μm
• : Optimize for γ or 2θ coverage: 0°/90° switchable
• : Multi-mode (0D/1D/2D) detector based on the hybrid photon counting

- In-situ XRD

• : Temperature: -190 to 600 ℃ (LN₂)
• : Electrochemical potential: ±1 A to ±10 mA (resolution: 0.004 %)/±2.5, 5, 10 V(resolution: 0.0015%)

- Pathfinder plus optics

• : Software push-button switch between:
• : Motorized Slit
• : 2-bounce Ge Analyzer
• : Automated absorber integrated

- Powder stage

• : 9 rotational powder stage (automated)

- Vacuum chuck stage

• : x,y for sample translation of up to +/- 150 mm
• : z-Drive with travel of up to 50 mm
• : Phi drive with infinite rotation
• : Max. Psi inclination up to 55°

- Centric Eulerian Cradle (CEC)

• : Five degrees of freedom sample stage:
• : x,y for sample translation of +/-40 mm
• : z-Drive for height alignment
• : Phi drive with 360° rotation
• : Psi drive and angular range from -11° to 98°
• : Various stage attachment available.

• 고유 에너지 준위로 인한 흡수 스펙트럼을 통해 물질의 정성분석이 가능하여 wafer, 박막, 소재 분석 등에 활용

• Wavenumber range(cm-1) : 6,000~670
• Detector : TE-MCT
• Spectral resolution (cm-1) : 2(option 0.8)
• Signal-to-noise (4cm-1, resolution) : >1,800:1
• Spatial resolution : 1.25㎛
• Mapping : < 5 spectra/sec (@4cm-1)
• Imaging : > 550 spectra/sec (@4cm-1)
• Wavenumber accuracy (cm-1) : ≤0.05 (@1,576cm-1)
• Beam splitter : ZnSe (optional KBr)
• Imaging pixel size : 5㎛ (TR/Refl), 1.25㎛ (ATR)
• Objective : 8x
• Numerical aperture (15x) : 0.6
• Positioning accuracy (at measurement point) :　±0.1㎛
• Repeatability : < 0.1㎛
• Software : 라이브러리(27만개), 다성분분석 가능, 정량분석 가능

• 고유 에너지 준위로 인한 흡수 스펙트럼을 통해 물질의 정성분석이 가능하여 wafer, 박막, 소재 분석 등에 활용

• Wavenumber range(cm-1) : 8,000~340
• Detector : Temperature controlled DTGS
• Spectral resolution (cm-1) : 0.4
• Signal-to-noise (4cm-1, resolution) : >60,000:1
• Wavenumber accuracy (cm-1) : ≤0.01 (@1,554cm-1)
• Wavenumber precision (cm-1) : ≤0.0005 (@1,554cm-1)
• Beamsplitter : KBr
• Temporal resolution : Up to 25 spectra per second(@16cm-1 spectral resolution)
• Software : 라이브러리(27만개), 다성분분석 가능, 정량분석 가능

• Sensor type : Heat flux plate
• Temperature Range : -90 ~ 400℃
• Heating rate : 0.01 ~ 100℃/min
• Cooling rate : 0.01 ~ 30℃/min
• Enthalpy precision : ±0.08%
• Temperature accuracy : ±0.05℃
• Temperature precision : ±0.008℃
• Calorimetric dynamic range : ±200mW
• Automatic gas changer & Mass flow controller : Standard (내장형)
• Auto-sampler : 54 sampler
• Software : TA universal Software

• Balance sensitivity : 0.1μg
• Capacity : 1300mg
• Balance accuracy : Better than 0.02%
• Balance precision : 0.001%
• Temperature range : -20℃ to 1200℃
• Temperature precision : ±1℃
• Scan rates : 0.1℃/min to 500℃/min
• Cooling method : Forced air cooled with an external fan
• Cooling Cycle time : 1100℃ to 50℃ < 13min
• Vacuum : 10-5 Torr
• Software : AutoStepwise TGA, Variable rate TGA, TGA Desomposition Kinetics

1) MTPS

• Thermal conductivity range : 0 to 500W/mK
• Thermal effusivity range : 5 to 40,000Ws½/m²K
• Temperature range : 50℃ to 200℃ (With option to extend to 500℃)
• Precision : better than 1%
• Accuracy : better than 5%
• Test time : 0.8 to 3 seconds
• Sensor size : 18mm diameter

2) Flex TPS

• Thermal conductivity range : 0.03 to 500W/mK
• Temperature range : 50℃ to 300℃
• Precision : better than 2%
• Accuracy : better than 5%
• Test time : 10 to 180 seconds
• Sensor size : 6mm, 13mm and 30mm diameter sensors available

• Align 모듈 개조
• Heating system
• 2 evaporation sources
• Highly accurate quartz crystal thickness monitor system

• 3인치 Cathode 3개
• 3인치 이온건 1개
• RF 파워 2SET
• DC 파워

• 조각 시편
• 4/6인치 웨이퍼
• 5/7인치 마스크
• 정렬 정확도 1μm 프리즘 및 2개의 카메라를 통한 동시 정렬 가능

• 화학 배스1
• 린스 배스1
• 퀵드로우 배스1 (Teflon coated SUS)

• 전류 측정 범위 (10 pA ~ 10 mA)
• 진공 (10-6 torr)
• 온도 조절 (-196 ~ 296°C) 가능

• Wavelength range - 175 ~ 3,300 nm
• UV-Vis Resolution - ≤ 0.05 nm
• NIR Resolution - ≤ 0.2 nm
• Wavelength - UV/Vis ± 0.080 nm
• Accuracy - NIR ± 0.300nm
• Wavelength - UV/Vis : ≤ 0.010 nm
• NIR : ≤ 0.040 nm

• 측정 가능 교류 주파수 범위 (10 µHz ~ 32 MHz)
• 인가 전압 범위 (10 V)

• step height: Nanometers to 1000 μm
• Low force with constant force control:0.03 to 50 mg
• Video: 5MP high-resolution color camera